TPV8200B Description
MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by TPV8200B/D NPN Silicon RF Power Transistor The TPV8200B is designed for output stages in band IV and V TV transmitter amplifiers. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. Including input and output matching networks, the TPV8200B.
TPV8200B Key Features
- To be used class AB for TV band IV and V
- Specified 28 Volts, 860 MHz Characteristics Output Power = 190 Watts (peak sync.) Output Power = 150 Watts (CW) Gain = 8
- Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ
- 860 MHz RF POWER TRANSISTOR NPN SILICON
- 65 to +150 Unit Vdc Vdc Vdc Adc Watts W/°C mAdc °C
- 35 80 5
- continued (TC = 25°C unless otherwise noted)
- DYNAMIC CHARACTERISTICS
- dB % W W