Datasheet4U Logo Datasheet4U.com

TPV8200B - RF Power Transistor

Key Features

  • high impedances. It can operate over the 470 MHz to 860 MHz bandwidth using a single fixed tuned circuit.
  • To be used class AB for TV band IV and V.
  • Specified 28 Volts, 860 MHz Characteristics Output Power = 190 Watts (peak sync. ) Output Power = 150 Watts (CW) Gain = 8 dB Min.
  • Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. TPV8200B Motorola Preferred Device 190 W, 470.
  • 860 MHz RF POWER.

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by TPV8200B/D NPN Silicon RF Power Transistor The TPV8200B is designed for output stages in band IV and V TV transmitter amplifiers. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. Including input and output matching networks, the TPV8200B features high impedances. It can operate over the 470 MHz to 860 MHz bandwidth using a single fixed tuned circuit. • To be used class AB for TV band IV and V. • Specified 28 Volts, 860 MHz Characteristics Output Power = 190 Watts (peak sync.) Output Power = 150 Watts (CW) Gain = 8 dB Min • Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ.